data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 1 features ? low forward voltage drop ? very small conduction losses ? high surge capability ? surge overload rating to 35a peak applications ? low voltage high frequency inverters ? dc-dc converters ? free wheeling ? polarity protection figure 1. package types of APD160 pin configuration vd/vh package vr package (do-41/r-1) (do-214ac) figure 2. pin configuration of APD160 (top view) do-41 r-1 do-214ac cathode anode cathode line by marking cathode line by marking cathode anode
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 2 ordering information APD160 - e1: lead free g1: green blank: bulk tr: ammo or tape & reel part number marking id package temperature range lead free green lead free green packing type APD160vd-e1 APD160vd-g1 d160vd 160vdg bulk do-41 -65 to 125 c APD160vdtr-e1 APD160vdtr-g1 d160vd 160vdg ammo APD160vh-e1 APD160vh-g1 d160vh 160vhg bulk r-1 -65 to 125 c APD160vhtr-e1 APD160vhtr-g1 d160vh 160vhg ammo do-214ac -65 to 125 c APD160vrtr-g1 160vrg tape & reel bcd semiconductor's pb-free products, as designated with "e1" suffix in the part number, are rohs compliant. products with ?g1? suffix are available in green packages. package vd: do-41 vh: r-1 vr: do-214ac circuit type
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 3 absolute maximum ratings (t a =25 c unless otherwise noted) (note 1) parameter symbol value unit maximum repetitive peak reverse voltage v rrm 60 v maximum dc blocking voltage v dc 60 v maximum rms voltage v rms 42 v average rectified forward current 0.375 ? (9.5mm) lead length i f(av) 1.0 a non-repetitive peak fo rward surge current 8.3ms single half sine-wave on rated load i fsm 35 a operating junction temperature range t j -65 to 125 c storage temperature range t stg -65 to 150 c note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. thermal characteristics (t a =25 c unless otherwise noted) parameter symbol value unit do-41 80 r-1 80 typical thermal resistance ja do-214ac 100 c/w electrical characteristics (t a =25 c unless otherwise noted) parameter symbol min typ max unit forward voltage @ i f =1.0a v f 0.68 v t a =25 c 0.5 reverse current @ rated v r (note 2) t a =100 c i r 10 ma note 2: pulse test: 300 s pulse width, 1.0% duty cycle.
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 4 typical performance characteristics ( t a =25 c unless otherwise noted ) figure 3. forward current derating curve figure 4. typical instantaneous forward characteristics figure 5. maximum non-repetitive surge current figure 6. typical reverse characteristics 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 average forward recitified current amperes ambient temperaure ( o c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.01 0.1 1 10 25 0 c 125 0 c instantaneous forward current (a) instantaneous forward voltage (v) 1 10 100 10 20 30 40 peak forward surge current (a) number of cycle at 60hz 0 102030405060708090100 0.1 1 10 100 1000 10000 instantaneous reverse current ( a) percent of instantaneous reverse voltage ( %) 25 0 c 125 0 c
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 5 typical performance characteristics (continued) figure 7. typical junction capacitance 110 10 60 40 400 junction capacitance (pf) reverse voltage (v) 91
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 6 mechanical dimensions do-41 unit: mm(inch)
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 7 mechanical dimensions (continued) r-1 unit: mm(inch)
data sheet schottky barrier rectifier APD160 aug. 2011 rev. 1. 7 bcd semiconductor manufacturing limited 8 mechanical dimensions (continued) do-214ac unit: mm(inch) 3. 990(0. 157) 4. 600(0. 181) 4. 800(0. 189) 5. 280(0. 208) 0. 760(0. 030) 1. 520(0. 060) 1. 900(0. 075) 2. 290(0. 090) 0. 100(0. 004) 0. 310(0. 012) 0. 152(0. 006) 0. 305(0. 012) cathode line by marking
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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